Strain-Induced Effects in Advanced MOSFETs
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- Synopsis
- Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.
- Copyright:
- 2010
Book Details
- Book Quality:
- Publisher Quality
- ISBN-13:
- 9783709103821
- Related ISBNs:
- 9783709103814
- Publisher:
- Springer Vienna
- Date of Addition:
- 10/17/16
- Copyrighted By:
- Springer
- Adult content:
- No
- Language:
- English
- Has Image Descriptions:
- No
- Categories:
- Nonfiction, Technology
- Submitted By:
- Bookshare Staff
- Usage Restrictions:
- This is a copyrighted book.