Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect
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- Synopsis
- This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.
- Copyright:
- 2018
Book Details
- Book Quality:
- Publisher Quality
- ISBN-13:
- 9789811061653
- Publisher:
- Springer Singapore, Singapore
- Date of Addition:
- 09/08/17
- Copyrighted By:
- Springer
- Adult content:
- No
- Language:
- English
- Has Image Descriptions:
- No
- Submitted By:
- Bookshare Staff
- Usage Restrictions:
- This is a copyrighted book.